View TGA4508-15_8185779.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com -40 -30 -20 -10 0 10 20 30 40 25 27 29 31 33 35 37 39 41 43 45 frequency (ghz) gain & return loss (db) gain irl orl 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) noise figure (db) key features ? typical frequency range: 30 - 42 ghz ? 21 db nominal gain ? 2.8 db nominal noise figure ? 14 dbm nominal p1db @ 38 ghz ? bias 3 v, 40ma ? 0.15 um 3mi phemt technology ? chip dimensions 1.7 x 0.8 x 0.1 mm (0.067 x 0.031 x 0.004) in primary applications ? point-to-point radio ? point-to-multipoint radio ? ka band vsat preliminary measured data bias conditions: vd = 3 v, id = 40 ma ka band low noise amplifier datasheet subject to change without notice
2 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 5 v 2/ vg1 gate 1 supply voltage range -1 v to 0 v i + positive supply current 190 ma 2/ | i g | gate supply current 6 ma p in input continuous wave power 12 dbm 2 / p d power dissipation 0.95 w 2/, 3 / t ch operating channel temperature 200 c 4 /, 5 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / current is defined under no rf drive conditions . combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / when operated at this power dissipation with a base plate temperature of 70 c, the median life is 3.0e3 hours. 4 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ these ratings apply to each individual fet. table ii dc probe tests (ta = 25 c, nominal) symbol parameter minimum maximum units v bvgs3 breakdown voltage gate- source -30 -5 v v bvgd3 breakdown voltage gate- drain -30 -5 v v p1,2,3 pinch-off voltage -1.0 -0.1 v q1 is 100 um fet, q2 is 200 um fet, q3 is 300 um fet
3 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii electrical characteristics (ta = 25 c, nominal) parameter typical units drain voltage, vd 3 v drain current, id 40 ma gate voltage, vg -0.5 to 0 v small signal gain, s21 21 db input return loss, s11 8 db output return loss, s22 15 db noise figure, nf 2.8 db output power @ 1 db compression gain @ 38 ghz, p1db 14 dbm
4 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv thermal information parameter test conditions t ch ( o c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) vd = 3 v i d = 40 ma pdiss = 0.12 w 85 125 3e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 30 31 32 33 34 35 36 37 38 39 40 fr e que ncy (ghz ) noise figure (db) measured data bias conditions: vd = 3 v, id = 40ma/60ma -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 frequency (ghz) gain (db) ids=40ma ids=60ma ids=60ma ids=40ma
6 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com -40 -35 -30 -25 -20 -15 -10 -5 0 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 frequency (ghz) output return loss (db) measured data bias conditions: vd = 3 v, id = 40ma/60ma -40 -35 -30 -25 -20 -15 -10 -5 0 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 frequency (ghz) input return loss (db) ids=40ma ids=40ma ids=60ma ids=60ma
7 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 5 7 9 11 13 15 17 19 21 23 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pin (dbm) pout (dbm), gain (db) 40 50 60 70 80 90 100 110 120 130 ids (ma) 5 7 9 11 13 15 17 19 21 23 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pin (dbm) pout (dbm), gain (db) 50 60 70 80 90 100 110 120 130 140 ids (ma) 40ghz 38ghz measured data bias conditions: vd = 3 v, id = 40ma pout ids gain bias conditions: vd = 3 v, id = 60 ma 40ghz 38ghz gain pout ids
8 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 8 9 10 11 12 13 14 15 16 17 18 34 35 36 37 38 39 40 41 42 43 frequency (ghz) p1db (dbm) measured data bias conditions: vd = 3 v, id = 40ma/60ma ids=60ma ids=40ma
9 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 0.000 (0.000) 0.120 (0.005) 1.588 (0.063) 1.708 (0.067) 0.557 (0.022) 1.029 (0.041) 1.259 (0.050) 0.000 (0.000) 0.532 (0.021) 0.719 (0.028) 0.840 (0.033) 0.532 (0.021) units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) gnd is backside of mmic bond pad #1 (rf in) 0.100 x 0.200 (0.004 x 0.008) bond pad #2 (vg) 0.100 x 0.100 (0.004 x 0.004) bond pad #3 (vd1,2) 0.100 x 0.100 (0.004 x 0.004) bond pad #4 (vd3) 0.100 x 0.100 (0.004 x 0.004) bond pad #5 (rf out) 0.100 x 0.200 (0.004 x 0.008) 1 23 4 5
10 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com chip assembly diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. vg vd rf in rf out 0.01 uf 0.01 uf 100 pf 100 pf
11 tga4508 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c.

▲Up To Search▲

Price & Availability of TGA4508-15

	To Download TGA4508-15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .